[IEEE] A Review: Breakdown Voltage Enhancement of GaN Semiconductors Based High Electron Mobility Transistors

15876 Post time 2024-4-19 21:19:42 | Show all posts |Read mode
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journal£ºIEEE Transactions on Device and Materials Reliability

Authors£ºOsman Cicek; Yosef Badali

Published date£º2024--

DOI£º10.1109/tdmr.2024.3379745

PDF link£ºhttps://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=10477272

Article link£ºhttp://dx.doi.org/10.1109/tdmr.2024.3379745

Article Source£ºInstitute of Electrical and Electronics Engineers (IEEE)¡£


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DKZ Post time 2024-4-19 21:19:43 | Show all posts

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