[IEEE] AlGaN/GaN-Based Multimetal Gated High-Electron-Mobility Transistor With Improved Linearity

n.so. Post time 2024-4-18 02:55:51 | Show all posts |Read mode
Reward10points

journal£ºIEEE Transactions on Electron Devices

Authors£ºMd. Tasnim Azad; Toiyob Hossain; Bejoy Sikder; Qingyun Xie; Mengyang Yuan; Eiji Yagyu; Koon Hoo Teo; Tom¨¢s Palacios; Nadim Chowdhury

Published date£º2023-11-

DOI£º10.1109/ted.2023.3311422

PDF link£ºhttps://ieeexplore.ieee.org/ielam/16/10294316/10251828-aam.pdf

Article link£ºhttp://dx.doi.org/10.1109/ted.2023.3311422

Article Source£ºInstitute of Electrical and Electronics Engineers (IEEE)¡£


Remark£º

Best Answer

Please adopt

View Full Content

Reply

Use magic Donate Report

All Reply1 Show all posts
juju77 Post time 2024-4-18 02:55:52 | Show all posts

This post has been completed

Completed attachments will be deleted within 24 hours.
Reply

Use magic Donate Report


Junior Member
  • post

  • reply

  • points

    20

Latest Reply



Return to the list