2.5kV/3.78mΩ·cm2 Low Forward Voltage Vertical β-Ga2O3 Schottky Rectifier With Field Plate Assisted Deep Mesa Termination

Post time 2024-4-27 19:17:12

journal：IEEE Electron Device Letters

Authors：Jiangbin Wan; Hengyu Wang; Ce Wang; Haoyuan Chen; Chi Zhang; Luanxi Zhang; Yanjun Li; Kuang Sheng

Published date：2024-5-

DOI：10.1109/led.2024.3375852

PDF link：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=10466723

Article link：http://dx.doi.org/10.1109/led.2024.3375852

Article Source：Institute of Electrical and Electronics Engineers (IEEE)。

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Post time 2024-4-27 19:17:13

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[IEEE] 2.5kV/3.78mΩ·cm2 Low Forward Voltage Vertical β-Ga2O3 Schottky Rectifier With Field Plate Assisted Deep Mesa Termination

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