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[IEEE] Shallow trench isolation for advanced ULSI CMOS technologies

AndyLeo Post time 2024-4-26 14:48:03 | Show all posts |Read mode
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journal：International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)

Authors：M. Nandakumar; A. Chatterjee; S. Sridhar; K. Joyner; M. Rodder; I.-C. Chen

Published date：--

DOI：10.1109/iedm.1998.746297

Article link：http://dx.doi.org/10.1109/iedm.1998.746297

Article Source：IEEE。


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