Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal–Semiconductor–Metal Photodetectors, Based on Epitaxial GaN/Si(111)

Post time 2024-4-26 10:41:08

journal：IEEE Transactions on Electron Devices

Authors：Pinki Pal; Amandeep Kaur; Sami Suihkonen; Jori Lemettinen; Apurba Laha; Subhabrata Dhar; Suddhasatta Mahapatra

Published date：2023-7-

DOI：10.1109/ted.2023.3277798

PDF link：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=10143735

Article link：http://dx.doi.org/10.1109/ted.2023.3277798

Article Source：Institute of Electrical and Electronics Engineers (IEEE)。

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Post time 2024-4-26 10:41:09

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[IEEE] Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal–Semiconductor–Metal Photodetectors, Based on Epitaxial GaN/Si(111)

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[IEEE] Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal–Semiconductor–Metal Photodetectors, Based on Epitaxial GaN/Si(111)