[SPIE] Modeling of the gate leakage in MOSFETs with Al2O3/¦Â-Ga2O3 gate stack

anonlibgen Post time 2024-4-19 14:30:50 | Show all posts |Read mode
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journal£ºOxide-based Materials and Devices XV

Authors£ºCarlo De Santi; Manuel Fregolent; Enrico Brusaterra; Kornelius Tetzner; Joachim W¨¹rfl; Matteo Buffolo; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini

Published date£º2024-3-15

DOI£º10.1117/12.3013497

Article link£ºhttp://dx.doi.org/10.1117/12.3013497

Article Source£ºSPIE¡£


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Dragon2000 Post time 2024-4-19 14:30:51 | Show all posts

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