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[SPIE] Strain-compensated InGaN red LEDs grown by micro-flow-channel MOVPE

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ilmondo Post time 2024-4-16 18:00:15 | Show all posts |Read mode
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journal£ºGallium Nitride Materials and Devices XIX

Authors£ºKazuhiro Ohkawa; Martin Velazquez-Rizo; Mohammed Najmi; Daisuke Iida

Published date£º2024-3-9

DOI£º10.1117/12.3001451

Article link£ºhttp://dx.doi.org/10.1117/12.3001451

Article Source£ºSPIE¡£


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