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[IEEE] A TCAD Simulation Study of Three-Independent-Gate Field-Effect Transistors at the 10-nm Node

.rr.at.onia Post time 2024-5-1 01:00:36 | Show all posts |Read mode
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journal£ºIEEE Transactions on Electron Devices

Authors£ºPatsy Cadareanu; Pierre-Emmanuel Gaillardon

Published date£º2021-8-

DOI£º10.1109/ted.2021.3089671

PDF link£ºhttps://ieeexplore.ieee.org/ielam/16/9493680/9466367-aam.pdf

Article link£ºhttp://dx.doi.org/10.1109/ted.2021.3089671

Article Source£ºInstitute of Electrical and Electronics Engineers (IEEE)¡£


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Isabelgodinho Junior Member
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Isabelgodinho Post time 2024-5-1 01:00:37 | Show all posts

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