[Other] Bipolar Resistive Switching Characteristics of TaO2 RRAM

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nive1ak Post time 2024-4-29 05:03:03 | Show all posts |Read mode
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journal£ºScience of Advanced Materials

Authors£ºWei-Kang Hsieh; Shoou-Jinn Chang

Published date£º2016-5-1

DOI£º10.1166/sam.2016.2700

Article link£ºhttp://dx.doi.org/10.1166/sam.2016.2700

Article Source£ºAmerican Scientific Publishers¡£


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