[World Scientific] Performance Enhancement of AlGaN/GaN HEMT by Optimization of Device Parameters Considering Nanometer Barrier Layer Thickness

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ryg Post time 2022-2-3 03:03:00 | Show all posts |Read mode
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journal£ºInternational Journal of Nanoscience

Authors£ºYogesh Kumar Verma; Varun Mishra; Santosh Kumar Gupta

Published date£º2020-12-

DOI£º10.1142/s0219581x20500118

Article link£ºhttp://dx.doi.org/10.1142/s0219581x20500118

Article Source£ºWorld Scientific Pub Co Pte Lt¡£


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