11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

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journal：Journal of Semiconductors

Authors：Yansheng Hu; Yuangang Wang; Wei Wang; Yuanjie Lv; Hongyu Guo; Zhirong Zhang; Hao Yu; Xubo Song; Xingye zhou; Tingting Han; Shaobo Dun; Hongyu Liu; Aimin Bu; Zhihong Feng

Published date：2024-1-1

DOI：10.1088/1674-4926/45/1/012501

PDF link：https://iopscience.iop.org/article/10.1088/1674-4926/45/1/012501

Article link：http://dx.doi.org/10.1088/1674-4926/45/1/012501

Article Source：IOP Publishing。


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