The effect of the barrier thickness on DC and RF performances of AlGaN/GaN HEMTs on silicon

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journal：Semiconductor Science and Technology

Authors：Chun Wang; Heng-Tung Hsu; Jui-Lung Lin; You-Chen Weng; Yi-Fan Tsao; Yuan Wang; Edward Yi Chang

Published date：2023-7-1

DOI：10.1088/1361-6641/acd13c

PDF link：https://iopscience.iop.org/article/10.1088/1361-6641/acd13c

Article link：http://dx.doi.org/10.1088/1361-6641/acd13c

Article Source：IOP Publishing。


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